Nexperia Partners with AIXTRON for 200mm SiC and GaN Power

AIXTRON SE supports Nexperia B.V. in the ramp-up of its 200mm volume production for silicon carbide (SiC) and gallium nitride (GaN) power devices. Nexperia has placed repeat orders for AIXTRON's G10-SiC and G10-GaN tools, essential for next-generation energy-efficient transistors used in various power conversion applications.

Nexperia, which achieved over $2.1 billion in revenue in 2023, is expanding its portfolio with new high-reliability and power-efficient devices. The AIXTRON systems will be installed at Nexperia’s wafer fab in Hamburg, Germany, enhancing its semiconductor production capabilities. The Hamburg site produces around 100 billion discrete semiconductors annually.

Dr. Felix Grawert, CEO of AIXTRON SE, expressed pride in the partnership, emphasizing the role of G10 epitaxy solutions in Nexperia's growth. Achim Kempe, COO at Nexperia, highlighted that the integration of G10 systems will significantly enhance their production capabilities in wide bandgap technology.